Vertical etching of Al<sub>0.7</sub>Sc<sub>0.3</sub>N for next generation of acoustic wave resonators-Reference-Cited by-同舟云学术

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Vertical etching of Al_0.7Sc_0.3N for next generation of acoustic wave resonators

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP)
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Author:

Terzic Tamara¹,Andrianov Nikolai¹,Chouiki Mustapha¹,Solonenko Dmytro¹,De Pastina Annalisa¹,Pashchenko Vladimir¹,Risquez Sarah¹

Affiliation:

1. Silicon Austria Labs GmbH,Villach,Austria

Funder

Silicon Austria Labs

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10267916/10267866/10267940.pdf?arnumber=10267940

Reference9 articles.

1. Wet etching of GaN, AlN, and SiC: a review

2. Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications;andrianov;48th international conference on Micro and Nano Engineering-Eurosensors (MNE-ES,2022

3. Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

4. Hybrid BAW/SAW AlN and AlScN thin film resonator

5. Dual-Mode Hybrid Quasi-SAW/BAW Resonators With High Effective Coupling Coefficient

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