High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

Published:2010-11 Issue:11 Volume:57 Page:2964-2969
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Yi-Che,Zhang Yun,Kim Hee-Jin,Choi Suk,Lochner Zachary,Dupuis Russell D.,Ryou Jae-Hyun,Shen Shyh-Chiang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5607250/05570940.pdf?arnumber=5570940

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Gain Gated Lateral Power Bipolar Junction Transistor;IEEE Electron Device Letters;2021-09

2. A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing;Nanoscale Advances;2020

3. Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

4. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact;IEEE Transactions on Electron Devices;2019-03

5. 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification;Advanced Electronic Materials;2018-12-27

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