Reply to Comments on “1.88-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET”
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Published:2010-12
Issue:12
Volume:57
Page:3543-3547
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Li Yuzhu,Alexandrov Petre,Zhao Jian H.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials