Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates-Reference-Cited by-同舟云学术

Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates

Published:2010-09 Issue:9 Volume:57 Page:2155-2162
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Yi-Jung,Guo Der-Feng,Chen Li-Yang,Tsai Tsung-Han,Huang Chien-Chang,Chen Tai-You,Hsu Chi-Hsiang,Liu Wen-Chau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5552158/05523963.pdf?arnumber=5523963

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2. Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector;IEEE Transactions on Electron Devices;2015-10

3. Enhanced Electrostatic Discharge Reliability in GaN-Based Light-Emitting Diodes by the Electrode Engineering;Journal of Display Technology;2014-10

4. Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks;Journal of the Korean Physical Society;2014-10

5. Effects of the Use of an Aluminum Reflecting and an ${\rm SiO}_{2}$ Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface;IEEE Transactions on Electron Devices;2013-07