Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs-Reference-Cited by-同舟云学术

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Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

Published:2008-05 Issue:5 Volume:29 Page:480-482
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Suthram Sagar,Hussain M. M.,Harris H. R.,Smith C.,Tseng H.-H.,Jammy R.,Thompson S. E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4494611/04483495.pdf?arnumber=4483495

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interactive Lattice and Process-Stress Responses in the Sub-7 nm Germanium-Based Three-Dimensional Transistor Architecture of FinFET and Nanowire GAAFET;IEEE Transactions on Electron Devices;2022-12

2. Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation;Physical Review Applied;2022-11-30

3. Performance Enhancement in Uniaxially Strained Germanium–Tin FinTFET: Fin Direction Dependence;IEEE Transactions on Electron Devices;2017-07

4. Strain scaling for CMOS;MRS Bulletin;2014-02

5. Understanding the FinFET Mobility by Systematic Experiments;Lecture Notes in Nanoscale Science and Technology;2013

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