Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices-Reference-Cited by-同舟云学术

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Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices

Published:2008-04 Issue:4 Volume:29 Page:338-340
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kwan-Yong Lim ,Min-Gyu Sung ,Heung-Jae Cho ,Yong Soo Kim ,Se-Aug Jang ,Seung Ryong Lee ,Kwangok Kim ,Hong-Seon Yang ,Hyun-Chul Sohn ,Seung-Ho Pyi ,Ja-Chun Ku ,Jin-Woong Kim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4475262/04464131.pdf?arnumber=4464131

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation;ECS Transactions;2012-04-27

2. Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation;MRS Proceedings;2011

3. Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma;Semiconductor Science and Technology;2009-04-17

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