Polar mode scattering in ballistic transport GaAs devices-Reference-Cited by-同舟云学术

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Polar mode scattering in ballistic transport GaAs devices

Published:1980-04 Issue:4 Volume:1 Page:54-54
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Maloney T.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31813/01481089.pdf?arnumber=1481089

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. THE KINK EFFECTS IN NANO-GaAs DEVICES DUE TO MULTI-VALLEY ELECTRON TRANSPORT;International Journal of Modern Physics B;2013-10-15

2. Transient Hot-Carrier Transport;Physics of Submicron Devices;1991

3. Band Structure and Transport Properties;GaAs Devices and Circuits;1987

4. Anomalous I–V characteristics of semiconductor heterojunction diodes due to transmission resonance;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-03

5. Influence of transmission resonance on carrier collection in a semiconductor quantum well;Journal of Applied Physics;1986-02

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