High-Resistivity Thin-Film Resistors Grown Using <formula formulatype="inline"><tex Notation="TeX">$ \hbox{CrB}_{2}$</tex></formula>–Si–SiC Materials by Radio-Frequency Magnetron Sputtering-Reference-Cited by-同舟云学术

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High-Resistivity Thin-Film Resistors Grown Using $ \hbox{CrB}_{2}$–Si–SiC Materials by Radio-Frequency Magnetron Sputtering

Published:2010-06 Issue:6 Volume:57 Page:1475-1480
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Park Kyoung-Woo,Hur Sung-Gi,Ahn Jun-Ku,Seong Nak-Jin,Yoon Soon-Gil

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5466557/05446346.pdf?arnumber=5446346

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of microstructures on the electrical properties of Cr–Si–C thin film resistors;Japanese Journal of Applied Physics;2022-06-10

2. Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition;Applied Physics Letters;2020-07-27

3. Stable temperature coefficient of resistance in TiSiON thin film resistors deposited by magnetron co-sputtering;Current Applied Physics;2016-11

4. Electrically Trimmable Phase Change Ge₂Sb₂Te₅ Resistors With Tunable Temperature Coefficient of Resistance;IEEE Transactions on Electron Devices;2014-08

5. Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits;IEEE Transactions on Electron Devices;2014-01

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