The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring-Reference-Cited by-同舟云学术

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The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring

Published:2007-02 Issue:2 Volume:28 Page:142-144
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lai Chieh-Ming,Fang Yean-Kuen,Yeh Wen-Kuan,Lin C. T.,Chou T. H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4068938/04068951.pdf?arnumber=4068951

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors;Sensors;2017-05-02

2. The Impact of Strain Technology on FUSI Gate SOI CMOSFET;IEEE Transactions on Device and Materials Reliability;2009-03

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