Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
Author:
Funder
Capes Funding Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/7858771/07805185.pdf?arnumber=7805185
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TCAD Simulation of Single Event Effects on Electronic Devices;Journal of Physics: Conference Series;2022-09-01
2. Embedded UV Sensors in CMOS SOI Technology;Sensors;2022-01-18
3. MoS2/Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection;IEEE Electron Device Letters;2019-03
4. Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection;IEEE Journal of the Electron Devices Society;2019
5. A monolithically integrated butt-coupled 3D bulk CMOS Si photodetector array with a fiber couplers platform on a single-chip;Sensors and Actuators A: Physical;2017-10
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