Photo-Sensitivity Enhancement of ${\rm HfO}_{2}$-Based MOS Photodiode With Specific Perimeter Dependency Due to Edge Fringing Field Effect-Reference-Cited by-同舟云学术

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Photo-Sensitivity Enhancement of ${\rm HfO}_{2}$-Based MOS Photodiode With Specific Perimeter Dependency Due to Edge Fringing Field Effect

Published:2012-06 Issue:6 Volume:12 Page:2313-2319
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Yang Che-Yu,Hwu Jenn-Gwo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/6189422/06152133.pdf?arnumber=6152133

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique;Applied Physics A;2023-08-14

2. Theoretical foundation of a scheme for the study of dielectrics by analyzing the distortion in fringing field;Review of Scientific Instruments;2020-09-01

3. Highly accurate tuning of current–voltage characteristic shift in a photo-sensitive three terminal metal–insulator–semiconductor device;Journal of Applied Physics;2020-08-21

4. Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity;Journal of Materials Science: Materials in Electronics;2020-07-06

5. Photodiode characteristics of HfO2 thin films prepared by magnetron sputtering;Materials & Design;2020-03

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