A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT-Reference-Cited by-同舟云学术

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A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT

Published:1992 Issue:10 Volume:27 Page:1421-1427
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Nakamura M.,Imai Y.,Sano E.,Yamauchi Y.,Nakajima O.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/4049/00156446.pdf?arnumber=156446

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Base resistance variation of AlGaAs/GaAs HBT by He+ ion implantation;Materials Letters;2001-12

2. A 60-dB gain, 55-dB dynamic range, 10-Gb/s broad-band SiGe HBT limiting amplifier;IEEE Journal of Solid-State Circuits;1999

3. AM suppression with low AM-PM conversion with the aid of a variable-gain amplifier;IEEE Journal of Solid-State Circuits;1996-05

4. Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 [micro sign]m AlGaAs/GaAs-HEMTs;Electronics Letters;1996

5. Over-30-GHz limiting amplifier ICs with small phase deviation for optical communication systems;IEEE Journal of Solid-State Circuits;1996

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