Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity-Reference-Cited by-同舟云学术

Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity

Published:2023-10 Issue:5 Volume:15 Page:1-7
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Sarua Andrei¹^ORCID,Pugh Jon²^ORCID,Harbord Edmund³^ORCID,Cryan Martin²^ORCID

Affiliation:

1. Center for Device Thermography and Reliability, School of Physics, University of Bristol, Bristol, U.K.

2. Department of Electrical and Electronic Engineering, Photonics and Quantum Group, University of Bristol, Bristol, U.K.

3. Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory, and Department of Electrical and Electronic Engineering, University of Bristol, Bristol, U.K.

Funder

Engineering and Physical Sciences Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/10225446/10224235.pdf?arnumber=10224235

Reference29 articles.

1. Tamm plasmon-polaritons: Possible electromagnetic states at the interface of a metal and a dielectric Bragg mirror

2. O vozmozhnoi sviazi elektronov na poverkhnostiakh kristalla;tamm;Zh Eksp Teor Fiz,1933

3. Telecommunication wavelength confined Tamm plasmon structures containing InAs/GaAs quantum dot emitters at room temperature

4. Tamm plasmons for efficient interaction of telecom wavelength photons and quantum dots

5. A Tamm plasmon-porous GaN distributed Bragg reflector cavity

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