Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS
Author:
Affiliation:
1. Institute of Electrodynamics, Microwave, and Circuit Engineering, Technische Universität Wien, Vienna, Austria
Funder
Austrian Science Fund
BIFOR
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/9714037/09707617.pdf?arnumber=9707617
Reference34 articles.
1. Fast Cascoded Quenching Circuit for Decreasing Afterpulsing Effects in 0.35- $\mu$ m CMOS
2. Integrated Circuit for Subnanosecond Gating of InGaAs/InP SPAD
3. Fast active quenching and recharging circuit for single-photon avalanche diodes
4. Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode
5. Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes
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1. Cascoded active quencher using a bipolar transistor for fast discharging of a single-photon avalanche;Optical Engineering;2024-07-09
2. A BiCMOS Active Quencher Using an Inverter-Based Differential Amplifier in the Comparator;IEEE Solid-State Circuits Letters;2024
3. Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology;Sensors and Actuators A: Physical;2023-12
4. Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges;Sensors;2023-03-24
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