Study of Electrical and Optical Peaking of Si Ring Modulators for Tailoring Modulation Band-Reference-Cited by-同舟云学术

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Study of Electrical and Optical Peaking of Si Ring Modulators for Tailoring Modulation Band

Published:2023-06 Issue:3 Volume:15 Page:1-6
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Kao Hsiang-Chih¹,Lin Ming-Wei²^ORCID,Lee Ming-Chang M.³^ORCID

Affiliation:

1. Institute of Photonics Technologies, National Tsing Hua University (NTHU), Hsinchu, Taiwan

2. Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan

3. Institute of Photonics Technologies and the Department of Electrical Engineering faculty, National Tsing Hua University (NTHU), Hsinchu, Taiwan

Funder

National Science and Technology Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/10101698/10130571.pdf?arnumber=10130571

Reference28 articles.

1. Ring Resonators: Theory and Modeling

2. U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band

3. Optimal design of a microring cavity optical modulator for efficient RF-to-optical conversion

4. Optical Peaking Enhancement in High-Speed Ring Modulators

5. High-speed silicon microring modulator at the 2 µm waveband with analysis and observation of optical bistability

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1. A 64 Gb/s NRZ O-Band Ring Modulator with 3.2 THz FSR for DWDM Applications;Optical Fiber Communication Conference (OFC) 2024;2024

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