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Comprehensive Study of the Performance of SiC MOSFET-Based Automotive DC–DC Converter Under the Influence of Parasitic Inductance

  • Published:2016-11 Issue:6 Volume:52 Page:5100-5111
  • ISSN:0093-9994
  • Container-title:IEEE Transactions on Industry Applications
  • language:
  • Short-container-title:IEEE Trans. on Ind. Applicat.

Author:

Han Di,Sarlioglu Bulent

Funder

Mid-West Electric Research Consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering

Cited by 55 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution above a Power Circuit;IEEJ Journal of Industry Applications;2024-01-01

2. Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization;2023 IEEE Design Methodologies Conference (DMC);2023-09-24

3. Design and Comparison of Input Filter Configurations for SiC-MOSFET-Based Automotive DC-AC Inverters;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. EMI Measurement and Reduction for SiC MOSFET based Motor Drivers of Electric Vehicles;2023 3rd International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT);2023-07-21

5. A Switching Oscillation Event-Triggered Switch Fault Detection Method for SiC DC–DC Converter;IEEE Transactions on Industrial Electronics;2023-07
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