Affiliation:
1. Dipt. di Informatica e Telecomunicazioni, Univ. di Trento, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
5 articles.
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1. (C–V) and y-parameters determination of JFETs under different environmental conditions;Physica B: Condensed Matter;2010-10
2. Radiation damage studies of detector-compatible Si JFETs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2007-03
3. An improved fabrication process for Si-detector-compatible JFETs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11
4. Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology;IEEE Transactions on Nuclear Science;2006-10
5. Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon;IEEE Transactions on Nuclear Science;2004-10