Gate-damage safe failure-mode deep analysis under short-circuit operation of 1.2kV and 1.7kV power SiC MOSFET using dedicated gate-source / drain-source voltage depolarization and damage-mode optical imaging-Reference-Cited by-同舟云学术

Gate-damage safe failure-mode deep analysis under short-circuit operation of 1.2kV and 1.7kV power SiC MOSFET using dedicated gate-source / drain-source voltage depolarization and damage-mode optical imaging

Published:2022-09-18 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
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Author:

Jouha Wadia¹,Richardeau Frederic¹,Azzopardi Stephane²

Affiliation:

1. University of Toulouse,LAPLACE, CNRS, INPT, UPS,Toulouse,France

2. SAFRAN TECH,Paris Saclay,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936342.pdf?arnumber=9936342

Reference13 articles.

1. Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization

2. Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions

3. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

4. Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress

5. Robustness of 1.2kV SiC MOSFET devices

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3. Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17