Neutron-induced latchup in SRAMs at ground level

Author:

Dodd P.E.,Shaneyfelt M.R.,Schwank J.R.,Hash G.L.

Publisher

IEEE

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analog single event on low noise amplifier with no source inductor;2022 International Conference on Intelligent Innovations in Engineering and Technology (ICIIET);2022-09-22

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3. Thermal Neutrons: a Possible Threat for Supercomputers and Safety Critical Applications;2020 IEEE European Test Symposium (ETS);2020-05

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5. Single-Event Latchup in a CMOS-Based ASIC Using Heavy Ions, Laser Pulses, and Coupled Simulation;IEEE Transactions on Nuclear Science;2019-07

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