Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/9182/29131/01315306.pdf?arnumber=1315306
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07
2. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06
3. Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applications;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
4. Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
5. A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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