A Novel SiGe Heterojunction Phototransistor Applicable in Wide Spectral Range
Author:
Affiliation:
1. Beijing University of Technology,Micro-Electronics Department,Beijing,China,100124
Funder
National Natural Science Foundation of China
Beijing Municipal Natural Science Foundation
Shandong Province Natural Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856839.pdf?arnumber=9856839
Reference4 articles.
1. SiGe Photo-Transistor for Low-Cost SSMF-Based Radio-Over-Fiber Applications at 850nm
2. Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber
3. An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805A/W responsivity
4. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate
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