Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology
Author:
Affiliation:
1. School of the Electronic Science and Engineering, Nanjing University,Nanjing,China,210023
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856791.pdf?arnumber=9856791
Reference6 articles.
1. CMOS MEMS Thermoelectric Infrared Sensor With Plasmonic Metamaterial Absorber for Selective Wavelength Absorption and Responsivity Enhancement
2. A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process
3. Performance enhance of CMOS-MEMS thermoelectric infrared sensor by using sensing material and structure design;shen;J Micromech Microeng,2020
4. Microbolometer with a salicided polysilicon thermistor in CMOS technology
5. Progress and trends in fault diagnosis for renewable and sustainable energy system based on infrared thermography: A review
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