A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor-Reference-Cited by-同舟云学术

A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor

Published:2024-04-01 Issue:7 Volume:24 Page:10316-10325
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Hassan Ayesha¹^ORCID,Mahar Asma¹^ORCID,Shetty Satish²,Lalwani Anand Vikas³^ORCID,Faruque K. Asif¹,Paul Riya¹^ORCID,Senesky Debbie G.⁴^ORCID,Salamo Gregory J.²,Mantooth H. Alan¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

2. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA

3. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

4. Department of Electrical Engineering and the Department of Aeronautics and Astronautics, Stanford University, Stanford, CA, USA

Funder

National Science Foundation Engineering Research Center for Power Optimization of Electro-Thermal systems (POETS) with Cooperative Agreements

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10487994/10423583.pdf?arnumber=10423583

Reference32 articles.

1. Hall-Effect Sensors

2. Output offset in silicon Hall effect based magnetic field sensors

3. Residual Offset in Silicon Hall-Effect Sensor: Analytical Formula, Stress Effects, and Implications for Octagonal Hall Plate Geometry

4. Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process

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