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Design and Characterization of a D-Band SiGe HBT Front-End for Dicke Radiometers

  • Published:2020-05-01 Issue:9 Volume:20 Page:4694-4703
  • ISSN:1530-437X
  • Container-title:IEEE Sensors Journal
  • language:
  • Short-container-title:IEEE Sensors J.

Author:

Turkmen EsrefORCID,Cetindogan Barbaros,Yazici Melik,Gurbuz YasarORCID

Funder

Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09

2. An On-Chip Antenna-Coupled Preamplified D-Band to J-Band Total Power Radiometer Chip in 130 nm SiGe BiCMOS Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14

4. Area-Efficient and Wideband Input Stages for SiGe BiCMOS G-Band LNAs;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

5. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
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