Simulation Study of Dual Metal-Gate Inverted T-Shaped TFET for Label-Free Biosensing
Author:
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an, China
Funder
111 Project of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/9906561/09851606.pdf?arnumber=9851606
Reference28 articles.
1. Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors
2. Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors
3. A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis
4. Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor
5. Comparative Analyses of Circular Gate TFET and Heterojunction TFET for Dielectric-Modulated Label-Free Biosensing
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