Analysis and minimization of small-geometry effects on the current gain of self-aligned 'etched-polysilicon' emitter bipolar transistors-Reference-Cited by-同舟云学术

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Analysis and minimization of small-geometry effects on the current gain of self-aligned 'etched-polysilicon' emitter bipolar transistors

Published:1992-06 Issue:6 Volume:39 Page:1392-1397
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nouailhat A.,Giroult-Matlakowski G.,Marty A.,Degors N.,Bruni M.-D.,Chantre A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/3738/00137319.pdf?arnumber=137319

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of a 0.6μm, single polysilicon emitter bipolar technology versus narrow emitter effects;Microelectronics Journal;2002-08

2. The Design and Fabrication of 0.35 µm Single-Polysilicon Self-Aligned Bipolar Transistors;Japanese Journal of Applied Physics;1998-04-15

3. Fluorine effects in n-p-n double-diffused polysilicon emitter bipolar transistors;IEEE Electron Device Letters;1996-09

4. Theoretical and Experimental Study of High-Energy Implanted Collectors for Bipolar Transistors in Bipolar-Complementary Metal Oxide Semiconductor Transistor Technology;Japanese Journal of Applied Physics;1994-07-15

5. Profile Tail Effects on Low Temperature Operation of Silicon Bipolar Transistors;Japanese Journal of Applied Physics;1993-12-15

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