GaN-on-Si Ka-band Single-Chip Front-End MMIC for Earth Observation Payloads-Reference-Cited by-同舟云学术

GaN-on-Si Ka-band Single-Chip Front-End MMIC for Earth Observation Payloads

Published:2022-06-19 Issue: Volume: Page:
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Container-title:2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
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Author:

Longhi Patrick Ettore¹,Costanzo Ferdinando¹,Pace Lorenzo¹,Ciccognani Walter¹,Colangeli Sergio¹,Giofre Rocco¹,Leblanc Remy²,Vitobello Fabio³,Limiti Ernesto¹

Affiliation:

1. University of Rome “Tor Vergata”,Electronic Engineering Dept,Italy

2. OMMIC SAS,France

3. REA - European Research Executive Agency,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865456.pdf?arnumber=9865456

Reference19 articles.

1. Millimeter-Wave Single-Pole Double-Throw Switches Based on a 100-nm Gate-Length AlGaN/GaN-HEMT Technology

2. X-band monolithic series feedback Ina;lehmann;1985 IEEE MTT-S International Microwave Symposium Digest,1985

3. Novel Design Charts for Optimum Source Degeneration Tradeoff in Conjugately Matched Multistage Low-Noise Amplifiers

4. A straightforward design technique for narrowband multi‐stage low‐noise amplifiers with I/O conjugate match

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