3.3kV SiC MOSFETs designed for low on-resistance and fast switching-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 24th International Symposium on Power Semiconductor Devices and ICs
language:
Short-container-title:

Author:

Bolotnikov Alexander,Losee Peter,Matocha Kevin,Glaser John,Nasadoski Jefrey,Wang Lei,Elasser Ahmed,Arthur Steven,Stum Zachary,Sandvik Peter,Sui Yang,Johnson Tammy,Sabate Juan,Stevanovic Ljubisa

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6222389/6228999/06229103.pdf?arnumber=6229103

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Considerations for SiC super junction MOSFET: On-resistance, gate structure, and oxide shield;Microelectronics Journal;2023-07

2. Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout;IEEE Transactions on Electron Devices;2023-07

3. Low-Frequency Noise Modeling of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors;Electronics;2022-09-25

4. Thin-drift-layer n-channel 4H-SiC IGBT with low switching loss and switching ringing reduction;Japanese Journal of Applied Physics;2022-07-15

5. The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs;IEEE Journal of the Electron Devices Society;2022

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP