The optimised design and characterization of 1200 V / 2.0 mΩ cm<sup>2</sup> 4H-SiC V-groove trench MOSFETs-Reference-Cited by-同舟云学术

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The optimised design and characterization of 1200 V / 2.0 mΩ cm² 4H-SiC V-groove trench MOSFETs

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Uchida Kosuke,Saitoh Yu,Hiyoshi Toru,Masuda Takeyoshi,Wada Keiji,Tamaso Hideto,Hatayama Tomoaki,Hiratsuka Kenji,Tsuno Takashi,Furumai Masaki,Mikamura Yasuki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7118854/7123286/07123395.pdf?arnumber=7123395

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel 4H-SiC Asymmetric MOSFET with Step Trench;Micromachines;2024-05-30

2. Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. An approach for extracting the SiC/SiO2 SiC MOSFET interface trap distribution and study during short circuit;Materials Science in Semiconductor Processing;2023-08

4. Development of Si Power ICs and Evolution to SiC Large Electric Capacity Power ICs;IEEJ Transactions on Industry Applications;2022-11-01

5. Review of Silicon Carbide Processing for Power MOSFET;Crystals;2022-02-11

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