10kV Trench Gate IGBTs on 4H-SiC-Reference-Cited by-同舟云学术

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10kV Trench Gate IGBTs on 4H-SiC

Published: Issue: Volume: Page:
ISSN:
Container-title:Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
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Author:

Q. Zhang H.-R. Chang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9957/32010/01488011.pdf?arnumber=1488011

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Trees in Silicone Gel Influenced by Different Frequency and Pulsewidth Under Unipolar High-Frequency Square Wave Voltage;IEEE Transactions on Dielectrics and Electrical Insulation;2024-06

2. Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off;IEEE Journal of the Electron Devices Society;2023

3. SiC power device design and fabrication;Wide Bandgap Semiconductor Power Devices;2019

4. Silicon Carbide IGBT;Advanced High Voltage Power Device Concepts;2011

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