Advanced 300mm 0.13μm BCD technology from 5V to 80V with highly reliable embedded Flash-Reference-Cited by-同舟云学术

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Advanced 300mm 0.13μm BCD technology from 5V to 80V with highly reliable embedded Flash

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Iwamoto K.,Kori M.,Terada C.,Doguchi T.,Mihara M.,Kasa Y.,Ukai K.,Ujiie Y.,Uehara H.,Hamanaka C.,Tanaka B.,Wada K.,Shimizu S.,Shukuri S.,Izumi N.,Mifuji M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6848890/6855954/06856061.pdf?arnumber=6856061

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated Circuit High-Voltage and Precision Operational Amplifier Using 180 nm BCD Technology;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

2. Experiments of a Novel Low-Voltage LDMOS With Ultrashallow Low-Resistance Path Modulated by Bulk Superjunction;IEEE Transactions on Electron Devices;2024-01

3. A Physics-Based Compact Model for the Static Drain Current in Heterojunction Barrier CNTFETs—Part II: Scattering, High-Field Effects, and Model Verification;IEEE Transactions on Electron Devices;2024-01

4. BCD Process Technologies;Springer Handbook of Semiconductor Devices;2022-11-11

5. Non Volatile Memory in Advanced Smart Power technology: product requirements and integration solutions;2022 IEEE International Memory Workshop (IMW);2022-05

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