Influence of the off-state gate-source voltage on the transient drain current response of SiC MOSFETs
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393599.pdf?arnumber=8393599
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Grid Fault Current Injection Using Virtual Synchronous Machines Featuring Active Junction Temperature Limitation of Power Devices;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-10
2. Particularities of the Short-Circuit Operation and Failure Modes of SiC-MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-10
3. Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs*;Chinese Physics B;2021-04-01
4. Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs;IEEE Transactions on Power Electronics;2021-03
5. Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09
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