A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm-Reference-Cited by-同舟云学术

A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm

Author:

Park Eunsung¹,Ha Won-Yong²,Park Hyo-Sung¹,Eom Doyoon¹,Choi Hyun-Seung¹,Ahn Dae-Hwan¹,Choi Woo-Young³^ORCID,Lee Myung-Jae¹^ORCID

Affiliation:

1. Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea

2. Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne, Rue de la Maladière 71 B., Switzerland

3. Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea

Funder

Korea Institute of Science and Technology (KIST) Institution Program

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Ministry of Trade, Industry and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

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