Epitaxial-Material Characterization Data for InP-Based Quantum Cascade Lasers Grown on Silicon Substrate-Reference-Cited by-同舟云学术

Epitaxial-Material Characterization Data for InP-Based Quantum Cascade Lasers Grown on Silicon Substrate

Published:2025-03 Issue:2: Pwr. and Effic. Scaling Volume:31 Page:1-7
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Cristobal Enrique Sanchez¹^ORCID,Fetters Matthew²,Liu Amy W. K.²^ORCID,Fastenau Joel M.²,Azim Ahmad¹,Milbocker Luke³,Go Rowel³,Villalobos-Meza Alejandro⁴^ORCID,Lyakh Arkadiy⁵^ORCID

Affiliation:

1. IRGLARE, LLC, Orlando, FL, USA

2. IQE, Inc., Greensboro, NC, USA

3. Department of Electrical Engineering & Computer Engineering, University of Central Florida, Orlando, FL, USA

4. NanoScience Technology Center and the College of Optics and Photonics, University of Central Florida, Orlando, FL, USA

5. Nanoscience Technology Center, the Department of Electrical Engineering & Computer Engineering, College of Optics and Photonics and The Department of Physics, University of Central Florida, Orlando, FL, USA

Funder

Naval Air Warfare Center Weapons Division, China Lake, CA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/2944/10663302/10564010.pdf?arnumber=10564010

Reference14 articles.

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2. Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power

3. 3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach

4. Long-Wave IR Quantum Cascade Lasers for emission in the λ = 8-12μm spectral region

5. 5.6 μm quantum cascade lasers based on a two-material active region composition with a room temperature wall-plug efficiency exceeding 28%