Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers-Reference-Cited by-同舟云学术

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Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Published:2009 Issue:3 Volume:15 Page:850-860
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Tien-Chang Lu ,Jun-Rong Chen ,Shih-Wei Chen ,Hao-Chung Kuo ,Chien-Cheng Kuo ,Cheng-Chung Lee ,Shing-Chung Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/5068462/04781784.pdf?arnumber=4781784

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal–Organic Chemical Vapor Deposition of n‐AlGaN Grown on Strain‐Relaxed Distributed Bragg Reflector Buffer Layers;physica status solidi (b);2024-04-22

2. Artifact-free secondary ion mass spectrometry profiling of a full vertical cavity surface emitting laser structure;Measurement;2024-02

3. In-situ reflectivity spectra measurements of GaN-Based VCSELs;2022 28th International Semiconductor Laser Conference (ISLC);2022-10-16

4. Observation of Whispering Gallery Modes in InGaN/GaN Multi-Quantum Well Microdisks with Ag Plasmonic Nanoparticles on Si Pedestals;Journal of Electronic Materials;2022-02-11

5. 氮化物垂直腔面发射激光器的发展与挑战（特邀）;ACTA PHOTONICA SINICA;2022

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