II-VI semiconductors on InP for green-yellow emitters
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/2944/22281/01039469.pdf?arnumber=1039469
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improvement of Power and Efficiency of High-Mesa Semi-Insulating InP: Fe Buried Heterostructure Lasers with Wide Bandgap Layers;Photonics;2023-09-29
2. A Theoretical Estimation of Optical, Vibrational and Structural Properties of II–VI Quaternary Alloy Zn0.5Cd0.5SySe1–y;Ukrainian Journal of Physics;2023-05-11
3. First-principles study of structural and electronic properties of Be0.25Zn0.75S mixed compound;AIP Conference Proceedings;2018
4. Application of indium tin oxide to the p-cladding layers of yellow/green II-VI compound semiconductor laser diode structures on InP substrates;physica status solidi (c);2016-02-09
5. Characterization of thermal properties of Cd1−x−yZnxMgySe mixed crystals by means of photopyroelectric and infrared imaging techniques;Materials Science and Engineering: B;2014-05
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