A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier-Reference-Cited by-同舟云学术

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A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier

Published:2021-11-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)
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Author:

Nakano Masaya,Kaneda Yoshinobu,Takeda Koichi,Shimoi Takahiro,Aoki Yasunobu,Nakanishi Satoru,Tashiro Yosuke,Taito Yasuhiko,Matsubara Ken,Nakagawa Munekatsu,Ogawa Tomoya,Kurafuji Takashi,Mitani Hidenori,Ito Takashi,Kono Takashi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9634699/9634177/09634782.pdf?arnumber=9634782

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array;VLSI-SoC: Technology Advancement on SoC Design;2022

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