Extremely scaled fully depleted SOI CMOS-Reference-Cited by-同舟云学术

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Extremely scaled fully depleted SOI CMOS

Published:2002 Issue: Volume: Page:
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Container-title:IEEE International SOI Conference SOI-02
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Author:

Fossum ,Trivedi ,Wu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8092/22386/01044449.pdf?arnumber=1044449

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device;Physica A: Statistical Mechanics and its Applications;2019-11

2. Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs;Microelectronic Engineering;2019-08

3. Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs;IEEE Electron Device Letters;2017-04

4. Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators;Microelectronic Engineering;2016-06

5. Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs;Journal of Computational Electronics;2016-04-05

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