Copper-SilK integration in a 0.18 μm double level metal interconnect-Reference-Cited by-同舟云学术

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Copper-SilK integration in a 0.18 μm double level metal interconnect

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Container-title:Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)
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Author:

Demolliens O.,Berruyer P.,Morand Y.,Tabone C.,Roman A.,Cochet M.,Assous M.,Feldis H.,Blanc R.,Tabouret E.,Louis D.,Arvet C.,Lajoinie E.,Gobil Y.,Passemard G.,Jourdan F.,Moussavi M.,Cordeau M.,Morel T.,Mourier T.,Ulmer L.,Sicurani E.,Tardif F.,Beverina A.,Trouillet Y.,Renaud D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6368/17043/00787121.pdf?arnumber=787121

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Modeling of Low-$k$/Cu Interconnects for 32-nm-Node and Beyond;IEEE Transactions on Electron Devices;2009-09

2. Dielectric anisotropy in the integration of Cu–SiLK™ system;Microelectronic Engineering;2008-01

3. Selective Sidewall Airgap Integration for Deep Submicrometer Interconnects;Electrochemical and Solid-State Letters;2004

4. Electroless Metallization of Dielectric SiLK Surfaces Functionalized by Viologen;Journal of The Electrochemical Society;2003

5. Electroless Plating of Copper via a Sn-Free Process on Dielectric SiLK Surface Modified by UV-Induced Graft Copolymerization with 4-Vinylpyridine and 1-Vinylimidazole;Journal of The Electrochemical Society;2002

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