A 5.8GHz Band LNA in TSMC 0.18μm CMOS Technology

Author:

Zheng Changbo1,Shen Runxi2,Guo Liming3,Li Xuanchi4,Ren Zhaotian1,Zhu Zhengyang5

Affiliation:

1. Xi’an Jiaotong-Liverpool University,Department of Electrical and Electronic Engineering,Suzhou,China,215123

2. Xi’an Jiaotong-Liverpool University,Department of Electronic Science and Technology,Suzhou,China,215123

3. Xi’an Jiaotong-Liverpool University,Department of Digtal Media Technology,Suzhou,China,215123

4. Xi’an Jiaotong-Liverpool University,Department of Information and computing Science,Suzhou,China,215123

5. Xi’an Jiaotong-Liverpool University,Department of Financial Mathematics,Suzhou,China,215123

Publisher

IEEE

Reference10 articles.

1. Design Concepts of Low-Noise Amplifier for Radio Frequency Receivers;Sumathi;RF Systems, Circuits and Components,2019

2. Performance Analysis of Radio Frequency (RF) Low Noise Amplifier (LNA) with various Transistor Configurations

3. The noise and linearity optimization for a 1.9-GHz CMOS low noise amplifier

4. Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology;Sturm;Radioengineering,2014

5. Cascode Common Source LNA with Inductive Degeneration Topology utilizing Different Output Matching Circuits in 45nm CMOS Technology

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