Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on >001< silicon substrate
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/4033/00155881.pdf?arnumber=155881
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