In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications-Reference-Cited by-同舟云学术

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In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications

Published:2022-09-19 Issue: Volume: Page:
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Container-title:ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
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Author:

Di Santa Maria Francesco Serra¹,Theodorou Christoforos¹,Balestra Francis¹,Ghibaudo Gerard¹,Cha Eunjung²,Zota Cezar B.²

Affiliation:

1. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS Grenoble INP, IMEP-LAHC,Grenoble,France,38000

2. IBM Research GmbH Zürich Laboratory,Rüschlikon,Switzerland,CH-8803

Funder

European Union

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947060/9947094/09947142.pdf?arnumber=9947142

Reference11 articles.

1. “Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

2. Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

3. Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures

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