Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETs-Reference-Cited by-同舟云学术

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Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETs

Published:1982 Issue:6 Volume:29 Page:1533-1538
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Anderson W. T.,Simons M.,King E. E.,Dietrich H. B.,Lambert R. J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4336371/04336399.pdf?arnumber=4336399

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge Collection Mechanisms in GaAs MOSFETs;IEEE Transactions on Nuclear Science;2015-12

2. Historical perspective on radiation effects in III-V devices;IEEE Transactions on Nuclear Science;2003-06

3. RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS;International Journal of High Speed Electronics and Systems;2003-03

4. Single-event phenomena in GaAs devices and circuits;IEEE Transactions on Nuclear Science;1996-04

5. Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer;IEEE Transactions on Nuclear Science;1995-12

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