Thermal limits of the maximum operating frequency of SiC MOSFETs
Author:
Affiliation:
1. Gdynia Maritime University,Department of Marine Electronics,Gdynia,Poland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9880553/9880857/09880909.pdf?arnumber=9880909
Reference16 articles.
1. A Novel Single-Stage Common-Ground Transformerless Buck–Boost Inverter
2. An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature
3. High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
4. Compact Thermal Models of Semiconductor Devices - a Review;górecki;International Journal of Electronics and Telecommunications,2019
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