Photocapacitance Decay Technique for Interface Trap Characterization Near Inversion Band in Wide Bandgap MOS Capacitors
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Published:2013-08
Issue:8
Volume:60
Page:2619-2625
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
DasGupta Sandeepan,Kaplar Robert J.,Atcitty Stanley,Marinella Matthew J.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials