AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates-Reference-Cited by-同舟云学术

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AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates

Published:2013-10 Issue:10 Volume:60 Page:3047-3052
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hiller Lars,Pezoldt Jorg

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6605590/06542721.pdf?arnumber=6542721

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Joule-heating induced thermal voltages in graphene three-terminal nanojunctions;Applied Physics Letters;2018-03-26

2. Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics;Semiconductor Science and Technology;2017-09-01

3. Graphene Nanoribbons for Electronic Devices;Annalen der Physik;2017-07-21

4. All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters;ACS Nano;2015-05-15

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