Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering-Reference-Cited by-同舟云学术

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Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Published:2013-04 Issue:4 Volume:60 Page:1310-1317
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhou Qian,Koh Shao-Ming,Thanigaivelan Thirumal,Henry Todd,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6482652/06476657.pdf?arnumber=6476657

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1. Study on amplitude of the noise power spectrum for nano-strained Si NMOSFET;Radiation Effects and Defects in Solids;2022-03-14

2. Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET;IETE Journal of Research;2021-01-18

3. Synthesis of Silyl Aluminum Reagents: Relevance Toward Atomic Layer Deposition of Metal Silicides and the Serendipitous Synthesis of a Novel Al-Hydride Cluster;Inorganic Chemistry;2020-11-24

4. Study on the Effect of Through Silicon Vias in Mitigating Single Event Transient Current;J NANOELECTRON OPTOE;2020

5. Study on the Charge Collection Mechanism of Single Event Transient Effect for Nano N-Channel Metal Oxide Semiconductor Field Effect Transistor;Journal of Nanoelectronics and Optoelectronics;2020-05-01

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