Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-<formula formulatype="inline"><tex Notation="TeX">$\kappa$</tex></formula> Interpoly Gate Dielectric Stacks-Reference-Cited by-同舟云学术

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Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric Stacks

Published:2013-07 Issue:7 Volume:60 Page:2261-2267
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tang Baojun,Robinson Colin,Zhang Wei Dong,Zhang Jian Fu,Degraeve Robin,Blomme Pieter,Toledano-Luque Maria,Van den bosch Geert,Govoreanu Bogdan,Van Houdt Jan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6542005/06527944.pdf?arnumber=6527944

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement;Materials;2014-10-13

2. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations;Microelectronics Reliability;2014-09

3. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells;IEEE Transactions on Electron Devices;2014-05

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