Measurements of Near-Infrared Frequency Mixing by Metal–Semiconductor Point-Contact Diodes-Reference-Cited by-同舟云学术

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Measurements of Near-Infrared Frequency Mixing by Metal–Semiconductor Point-Contact Diodes

Published:2005-08 Issue:4 Volume:54 Page:1407-1411
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:en
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Bava E.,Beverini N.,Carelli G.,DeMichele A.,Galzerano G.,Maccioni E.,Moretti A.,Prevedelli M.,Sorrentino F.,Svelto C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/19/31498/01468545.pdf?arnumber=1468545

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulations of infrared and optical rectification by geometrically asymmetric metal–vacuum–metal junctions for applications in energy conversion devices;Nanotechnology;2010-03-11

2. Rectification properties of geometrically asymmetric metal–vacuum–metal junctions: a comparison of tungsten and silver tips to determine the effects of polarization resonances;Journal of Physics: Condensed Matter;2009-09-08

3. Three-dimensional analysis of the rectifying properties of geometrically asymmetric metal-vacuum-metal junctions treated as an oscillating barrier;Physical Review B;2008-11-04

4. Three-dimensional analysis of the geometrical rectifying properties of asymmetric metal-vacuum-metal junctions and extension for energy conversion;Physical Review B;2008-02-08

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