Improve the Breakdown Voltage of Silicon Pixel Sensor With Optimized Multi-Guard Rings-Reference-Cited by-同舟云学术

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Improve the Breakdown Voltage of Silicon Pixel Sensor With Optimized Multi-Guard Rings

Published:2023-06-26 Issue: Volume: Page:
ISSN:
Container-title:2023 China Semiconductor Technology International Conference (CSTIC)
language:
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Author:

Sun Peng¹,Xu Gaobo¹,Fu Jianyu²,Ding Mingzheng¹,Yan Yinan¹,Zhang Luoyun¹,Yin Huaxiang¹

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences,Integrated Circuit Advanced Process R&D Center,Beijing,China,100029

2. University of Chinese Academy of Sciences,Beijing,China,100049

Funder

National Natural Science Foundation of China

Institute of Microelectronics

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219248.pdf?arnumber=10219248

Reference4 articles.

1. Challenges for silicon pixel sensors at the European XFEL

2. Impact of plasma effects on the performance of silicon sensors at an X-ray FEL

3. Roadmap of ultrafast x-ray atomic and molecular physics

4. AMO science at the FLASH and European XFEL free-electron laser facilities

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